Time-resolved cathodoluminescence study of carrier relaxation in strained (InP)2/(GaP)2 quantum wires

نویسنده

  • D. H. Rich
چکیده

The carrier relaxation kinetics and nonlinear optical properties of strain-induced laterally ordered ~InP!2/~GaP!2 quantum wire ~QWR! samples were examined with time-resolved cathodoluminescence. A temperature dependence of the QWR luminescence decay time reveals that thermal activation of carriers in the QWR and transfer to and from In0.49Ga0.51P barriers plays an important role in determining the measured lifetimes. The presence of disorder in the QWRs was found to induce inhomogeneous regions which exhibit large variations in carrier capture and band filling. © 1996 American Institute of Physics. @S0003-6951~96!02950-6#

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Linearly polarized and time-resolved cathodoluminescence study of strain- induced laterally ordered (InP)2 /(GaP)2 quantum wires

The optical properties of ~InP!2 /~GaP!2 bilayer superlattice ~BSL! structures have been examined with linearly polarized cathodoluminescence ~CL!, time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ;18% forms during the metalorganic chemical vapor deposition growth of short period ~InP!2 /~GaP!2 bilayer superlattices. Transmission ...

متن کامل

An optical method for studying carrier diffusion in strained „InP...2 /„GaP...2 quantum wires

The carrier transport in strain-induced laterally ordered ~InP!2 /~GaP!2 quantum wire ~QWR! samples was examined with a noncontact Haynes–Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the @110# and @11̄0# directions ~perpendicular and parallel to the QWRs, respectively! was observed. The temperature dependence...

متن کامل

Nonlinear optical effects in strain-induced laterally ordered (InP)2/(GaP)2 quantum wires.

The nonlinear optical properties of a ~InP!2/~GaP!2 bilayer superlattice structure have been examined with linearly polarized cathodoluminescence spectroscopy. Transmission electron microscopy showed a composition modulation with a period of ;800 Å along the @110# direction, which occurs spontaneously during the growth, resulting in coherently strained quantum wires. The strong excitation depen...

متن کامل

Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

Spatially, spectrally, and temporally resolved cathodoluminescence ~CL! techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells ~QWs!. Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition...

متن کامل

Direct determination of the ambipolar diffusion length in strained InxGa1-xAs/InP quantum wells by cathodoluminescence

The ambipolar diffusion length is measured in strained &Gal-&/InP quantum wells for several mole fractions in the interval 0.3 <X <0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with result...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1996